MT41K128M16JT-125:K vs MT41K128M16JT-125 AUT:K 对比

详细并排对比 MT41K128M16JT-125:K 出自 Micron Technology 和 MT41K128M16JT-125 AUT:K 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT41K128M16JT-125:K MT41K128M16JT-125:K - 2Gb DDR3L SDRAM 1600MT/s | Micron Technology

MT41K128M16JT-125:K - 2Gb DDR3L SDRAM 1600MT/s | Micron Technology

MT41K128M16JT-125:K ✓ 量产中
Micron Technology
MT41K128M16JT-125 AUT:K MT41K128M16JT-125 AUT:K - 2Gbit DDR3L SDRAM 96-FBGA | Micron

MT41K128M16JT-125 AUT:K - 2Gbit DDR3L SDRAM 96-FBGA | Micron

MT41K128M16JT-125 AUT:K ✓ 量产中

规格对比

参数 MT41K128M16JT-125:K MT41K128M16JT-125 AUT:K
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $9.75 $12.17
存储器类型 DDR3L SDRAM DDR3L SDRAM
Memory Capacity 2 Gbit —
存储组织 128M x 16 128M x 16
接口 Parallel Parallel
Clock Frequency 800 MHz (1600 MT/s data rate) 800 MHz
Access Time (Clock Cycle) 13.75 ns —
Supply Voltage (VDD) 1.35 V (1.283 V to 1.45 V) —
Prefetch Architecture 8n-bit —
封装 96-FBGA (8x14 mm) 96-FBGA (8x14)
安装类型 Surface Mount Surface Mount
工作温度 0C to +95C -40C to +125C
Self Refresh Auto self-refresh —
Write Leveling Supported —
Data Mask Supported —
On-Die Termination Dynamic ODT supported —
Asynchronous Reset Supported —
RoHS 状态 Compliant [DATA_NEEDED: RoHS status]
存储容量 — 2 Gbit
Access Time — 13.75 ns
电源电压 — 1.35 V
Speed Grade — -125 (1600 MT/s)
Automotive Qualification — Yes (AUT part number suffix)
Marking Code — D9VKD
数据速率 — 1600 MT/s
Packaging Option — Tape & Reel (TR suffix variant available)

数据手册与资源

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